| AVS 55th International Symposium & Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
| Session PS-ThP |
| Session: | Plasma Science Poster Session |
| Presenter: | Y. Kim, Kunsan National University, Korea |
| Authors: | Y. Kim, Kunsan National University, Korea W.K. Yang, Kunsan National University, Korea J.H. Joo, Kunsan National University, Korea |
| Correspondent: | Click to Email |
Remote plasma has been used in PEALD to reduce adsorbed precursor into a compound layer like HfO2. The demanding role of plasma is a supplier of radicals not ions which might induce charge damage to devices. We focused the effects of plasma in two aspects; ion transport and thermal energy transfer to the wafer which have been underestimated in previous works. Advanced Energy’s Remote Plasma Source is installed 300mm above a wafer and operated at a few to hundreds of mTorr range, within 1.5kW. Plasma was well localized within the quartz chamber region at high pressure regime due to reduced mobility of charged particles. At 10mTorr, plasma was spread to all over the chamber. Measured surface temperatures at four points from the wafer showed 50, 70, 150, and 600°C within a minute from ignition of Ar ICP(~2MHz, 500W). Temperature rise at the wafer surface could be from three mechanisms: ion kinetic energy, ion and meta-stable recombination heat release. We developed a 2D and 3D fluid based model using CFD-ACE+ to investigate heat transfer from plasma source including chamber outside cooling by air.