| AVS 55th International Symposium & Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
| Session PS-ThP |
| Session: | Plasma Science Poster Session |
| Presenter: | S. Jeong, SAMSUNG ELECTRONICS, South Korea |
| Authors: | S. Jeong, SAMSUNG ELECTRONICS, South Korea D. Sung, SAMSUNG ELECTRONICS, South Korea K. Kim, SAMSUNG ELECTRONICS, South Korea A. Ushakov, SAMSUNG ELECTRONICS, South Korea M. Park, SAMSUNG ELECTRONICS, South Korea S. Cho, SAMSUNG ELECTRONICS, South Korea S. Kim, SAMSUNG ELECTRONICS, South Korea H. Park, SAMSUNG ELECTRONICS, South Korea |
| Correspondent: | Click to Email |
Time-modulated etching process in a dual-frequency capacitively coupled fluorocarbon plasma has been investigated. In the pulsed-mode, etching rate non-uniformity decreased compared to the continuous-mode. The non-uniformity further decreased with lowering duty ratio. In addition, we find that more complex dissociation pattern in time-modulated fluorocarbon plasma than in continuous-wave driven plasma. Difference in the number of negative ions for the two different modes has been observed. We also discuss the relationship between the pulsed-mode process parameters and oxide-to-PR selectivities.