| AVS 54th International Symposium | |
| Thin Film | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | TF-TuM1 Study of Growth Process and Structures of Carbon Nanowalls Synthesized Using Radical Injection Plasma Enhanced CVD S. Kondo, Nagoya University, Japan, K. Yamakawa, Katagiri Engineering Co., Ltd., Japan, M. Hiramatsu, Meijo University, Japan, M. Hori, Nagoya University, Japan |
| 8:20am | TF-TuM2 Evaluation and Control of Electric Conduction of Carbon Nanowalls Fabricated by Plasma-Enhanced CVD W. Takeuchi, M. Ura, Nagoya University, Japan, Y. Tokuda, Aichi Institute of Technology, Japan, M. Hiramatsu, Meijo University, Japan, H. Kano, NU Eco-Engineering Co.,Ltd., Japan, M. Hori, Nagoya University, Japan |
| 8:40am | TF-TuM3 Low Temperature Deposition of Carbon Nanosheets by C2H2/H2 Plasma Enhanced Chemical Vapor Deposition M.Y. Zhu, R.A. Outlaw, K. Hou, P. Miraldo, D. Manos, College of William and Mary |
| 9:00am | TF-TuM4 Field Emission Performance of Carbon Nanosheets K. Hou, R.A. Outlaw, College of William and Mary, M.E. Kordesch, Ohio University, M.Y. Zhu, P. Miraldo, College of William and Mary, B.C. Holloway, Luna Innovations Incorporated, D. Manos, The College of William and Mary |
| 9:20am | TF-TuM5 Enhanced Field Emission from Mo2C Coated Carbon Nanosheets M. Bagge-Hansen, P. Miraldo, R.A. Outlaw, M.Y. Zhu, M. Hou, D. Manos, College of William and Mary |
| 9:40am | TF-TuM6 Production of Large Area Graphene Sheets by Si Desorption from SiC G.G. Jernigan, J.C. Culbertson, B.L. VanMil, K.K. Lew, R.L. Myers-Ward, D.K. Gaskill, P.M. Campbell, E.S. Snow, U.S. Naval Research Laboratory |
| 10:40am | TF-TuM9 Invited Paper Epitaxial Graphene - A New Paradigm for Nanoelectronics W.A. de Heer, Georgia Institute of Technology |
| 11:20am | TF-TuM11 Rotational Stacking of Graphene Films Grown on 4H-SiC(000-1) J. Hass, J.E. Millán-Otoya, M. Sprinkle, X. Li, The Georgia Institute of Technology, F. Varchon, L. Magáud, LEPES-CNRS, France, P.N. First, E.H. Conrad, The Georgia Institute of Technology |
| 11:40am | TF-TuM12 Probing the Interface between Graphene and SiC at the Atomic-scale N.P. Guisinger, National Institute of Standards and Technology, G.M. Rutter, Georgia Institute of Technology, J.N. Crain, E.A.A. Jarvis, M.D. Stiles, National Institute of Standards and Technology, P.N. First, Georgia Institute of Technology, J.A. Stroscio, National Institute of Standards and Technology |
| 12:00pm | TF-TuM13 Quasiparticle Interference in Epitaxial Graphene G.M. Rutter, Georgia Institute of Technology, J.N. Crain, N.P. Guisinger, National Institute of Standards and Technology, P.N. First, Georgia Institute of Technology, J.A. Stroscio, National Institute of Standards and Technology |