| AVS 54th International Symposium | |
| Thin Film | Tuesday Sessions |
| Session TF-TuM |
| Session: | Two-Dimensional Carbon Nanostructures |
| Presenter: | J. Hass, The Georgia Institute of Technology |
| Authors: | J. Hass, The Georgia Institute of Technology J.E. Millán-Otoya, The Georgia Institute of Technology M. Sprinkle, The Georgia Institute of Technology X. Li, The Georgia Institute of Technology F. Varchon, LEPES-CNRS, France L. Magáud, LEPES-CNRS, France P.N. First, The Georgia Institute of Technology E.H. Conrad, The Georgia Institute of Technology |
| Correspondent: | Click to Email |
The presence of Dirac electrons and micron scale coherence lengths have been demonstrated in multi-layer graphene grown on SiC, suggesting that an all-carbon paradigm for electronic circuits may be possible.1 It is now critical to understand the source of these unique transport properties and explain their dependence on: 1) graphene stacking order and 2) graphene/SiC substrate interactions. We will present surface X-ray reflectivity data that suggest a new structural model for multilayer graphene grown on the SiC (000-1) (C-terminated) face.2 Reflectivity modeling indicates a high density of stacking faults with distinct rotational alignments. These complex rotational phases will be discussed in the context of recent ab initio calculations which show that this type of stacking effectively decouples adjacent graphene layers. This provides a potential explanation for transport being confined to a single graphene layer.
1 C. Berger, et al., Science 312, 1191 (2006).
2 J. Hass, et al., Phys. Rev. B, in press (2007).