AVS 54th International Symposium
    Thin Film Tuesday Sessions
       Session TF-TuM

Invited Paper TF-TuM9
Epitaxial Graphene - A New Paradigm for Nanoelectronics

Tuesday, October 16, 2007, 10:40 am, Room 613/614

Session: Two-Dimensional Carbon Nanostructures
Presenter: W.A. de Heer, Georgia Institute of Technology
Correspondent: Click to Email

Multilayer graphene grown on single-crystal silicon carbide by vacuum decomposition is a promising material for nanoelectronics. The material can be patterned using standard nanolithography methods. The transport properties, which are closely related to those of carbon nanotubes, are dominated by a single graphene layer at the silicon carbide interface. This epitaxial layer reveals the Dirac nature of the charge carriers. Unlike graphite, multilayer graphene is electronically related to single layer graphene with an anomalous Berry's phase as evidenced from transport measurements, from infrared absorption measurements and from Raman scattering measurements. Patterned structures show quantum confinement of electrons and phase coherence lengths beyond one micrometer at 4K, with mobilities exceeding 25000 cm2/Vs. These parameters suggest that all-graphene electronically coherent devices may be possible. Recent developments will be discussed including epitaxial graphene FETs.