| AVS 54th International Symposium | |
| Plasma Science and Technology | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS1-ThM1 Plasma Modification of Surface Traps in Mesoporous TiO2 D.J.V. Pulsipher, E.R. Fisher, Colorado State University |
| 8:20am | PS1-ThM2 A Robust Passivation-Enhanced Cryogenic Process used for Silicon Deep Etching L.E. Pichon, E.H. Oubensaid, C. Duluard, R. Dussart, P. Lefaucheux, GREMI/CNRS, Université d'Orléans, France, M. Boufnichel, STMicroelectronics Tours, France, P. Ranson, GREMI/CNRS, Université d'Orléans, France, L.J. Overzet, University of Texas at Dallas |
| 8:40am | PS1-ThM3 3-D Profile Simulation of Silicon Etching: The Effects of Redeposition on Surface Roughening H. Kawai, W. Guo, Y.P. Yin, H.H. Sawin, Massachusetts Institute of Technology |
| 9:00am | PS1-ThM4 In Situ Measurement of the Ion Incidence Angle Dependence of the Ion-Enhanced Etching Yield in Plasma Reactors R.J. Belen, S. Gomez, University of California Santa Barbara, M. Kiehlbauch, Lam Research Corporation, E.S. Aydil, University of Minnesota |
| 9:20am | PS1-ThM5 Modeling of Angular Dependence in Plasma Etching Used for Profile Simulation W. Guo, Y.P. Yin, H.H. Sawin, Massachusetts Institute of Technology |
| 9:40am | PS1-ThM6 Geometrical Effects on Etching Profile Evolution H. Fukumoto, K. Eriguchi, K. Ono, Kyoto University, Japan |
| 10:00am | PS1-ThM7 Invited Paper Growth Precursor Measurements and Study of Plasma Chemistry by Means of Mass Spectrometry J. Benedikt, A. Consoli, Ruhr-University Bochum, Germany, M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands, A. von Keudell, Ruhr-University Bochum, Germany |
| 10:40am | PS1-ThM9 Ground and Metastable Atom Densities in Rare-Gas Diluted O2 and N2 Plasmas and Silicon Oxynitride Growth T. Kitajima, T. Nakano, National Defense Academy of Japan, T. Makabe, Keio University, Japan |