AVS 54th International Symposium | |
Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
2:00pm | PS-MoA1 Activation Energies for HfO2 and Si Etching in BCl3 Plasmas, and Boron Cleaning from Si in H2 Plasmas C. Wang, V.M. Donnelly, University of Houston |
2:20pm | PS-MoA2 Analyses of Deposition/Etching Regimes during Selective Etching of HfO2 on Silicon in BCl3 Plasmas: Impact of Chamber Walls E. Sungauer, ST Microelectronics, France, X. Mellhaoui, E. Pargon, LTM/CNRS, France, Th. Lill, Applied Materials Inc., O. Joubert, LTM/CNRS, France |
2:40pm | PS-MoA3 Optical Emission Study of an Inductively Coupled Cl2/H2 Plasma during InP Etching of Micro-nanostructures used for Photonic Applications L. Gatilova, S. Bouchoule, S. Guilet, Laboratoire de Photonique et de Nanostructures (LPN)-CNRS, France, P. Chabert, Laboratoire de Physique et de Technologie de Plasmas (LPTP)-CNRS, France |
3:00pm | PS-MoA4 Dry Etching of Ge2Sb2Te5 for Phase Change Memory Applications: Characterization and Design of Low Damage Process P. Petruzza, STMicroelectronics Italy |
3:40pm | PS-MoA6 Invited Paper John A. Thornton Memorial Award Lecture - Etching of SiC, GaN and ZnO for Wide Bandgap Semiconductor Device Applications S.J. Pearton, L.F. Voss, W.T. Lim, University of Florida, R.J. Shul, Sandia National Laboratories |
4:20pm | PS-MoA8 Comparative Study of ECR and ICP Plasma Etching of High-k Dielectric HfO2 Films with BCl3-Containing Gas Chemistries D. Hamada, K. Nakamura, Y. Ueda, M. Yoshida, K. Eriguchi, K. Ono, Kyoto University, Japan |
4:40pm | PS-MoA9 Investigation of Surface Reactions for Chlorine-Based Plasma Etching of Nitrided Hafnium Silicates R.M. Martin, University of California at Los Angeles, B. Xia, A. Misra, Air Liquide, J.P. Chang, University of California at Los Angeles |
5:00pm | PS-MoA10 Plasma Source-Dependent Charging Damage Polarities in the Performance Degradation of MOSFETs with Hf-based High-k Gate Dielectrics M. Kamei, K. Eriguchi, H. Fukumoto, K. Ono, Kyoto University, Japan |