AVS 54th International Symposium
    Plasma Science and Technology Monday Sessions

Session PS-MoA
Plasma Processing for High k, III-V and Smart Materials

Monday, October 15, 2007, 2:00 pm, Room 607
Moderator: L. Stafford, University of Houston


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:00pm PS-MoA1
Activation Energies for HfO2 and Si Etching in BCl3 Plasmas, and Boron Cleaning from Si in H2 Plasmas
C. Wang, V.M. Donnelly, University of Houston
2:20pm PS-MoA2
Analyses of Deposition/Etching Regimes during Selective Etching of HfO2 on Silicon in BCl3 Plasmas: Impact of Chamber Walls
E. Sungauer, ST Microelectronics, France, X. Mellhaoui, E. Pargon, LTM/CNRS, France, Th. Lill, Applied Materials Inc., O. Joubert, LTM/CNRS, France
2:40pm PS-MoA3
Optical Emission Study of an Inductively Coupled Cl2/H2 Plasma during InP Etching of Micro-nanostructures used for Photonic Applications
L. Gatilova, S. Bouchoule, S. Guilet, Laboratoire de Photonique et de Nanostructures (LPN)-CNRS, France, P. Chabert, Laboratoire de Physique et de Technologie de Plasmas (LPTP)-CNRS, France
3:00pm PS-MoA4
Dry Etching of Ge2Sb2Te5 for Phase Change Memory Applications: Characterization and Design of Low Damage Process
P. Petruzza, STMicroelectronics Italy
3:40pm PS-MoA6 Invited Paper
John A. Thornton Memorial Award Lecture - Etching of SiC, GaN and ZnO for Wide Bandgap Semiconductor Device Applications
S.J. Pearton, L.F. Voss, W.T. Lim, University of Florida, R.J. Shul, Sandia National Laboratories
4:20pm PS-MoA8
Comparative Study of ECR and ICP Plasma Etching of High-k Dielectric HfO2 Films with BCl3-Containing Gas Chemistries
D. Hamada, K. Nakamura, Y. Ueda, M. Yoshida, K. Eriguchi, K. Ono, Kyoto University, Japan
4:40pm PS-MoA9
Investigation of Surface Reactions for Chlorine-Based Plasma Etching of Nitrided Hafnium Silicates
R.M. Martin, University of California at Los Angeles, B. Xia, A. Misra, Air Liquide, J.P. Chang, University of California at Los Angeles
5:00pm PS-MoA10
Plasma Source-Dependent Charging Damage Polarities in the Performance Degradation of MOSFETs with Hf-based High-k Gate Dielectrics
M. Kamei, K. Eriguchi, H. Fukumoto, K. Ono, Kyoto University, Japan