| AVS 54th International Symposium | |
| Plasma Science and Technology | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS-FrM1 Controlling Surface States of Nanocrystalline TiO2 and its Application in Dye-Sensitized Solar Cells M. Dhayal, National Physics Laboratory, India, H.B. Gu, K.H. Park, Chonnam National University, Korea |
| 8:20am | PS-FrM2 Role of UV/VUV Radiation and Ion Bombardment in the Degradation and Roughening of Photoresist Polymers D.G. Nest, D.B. Graves, University of California, Berkeley, S. Engelmann, R.L. Bruce, T. Kwon, R. Phaneuf, G.S. Oehrlein, University of Maryland, College Park, C. Andes, Rohm and Haas Electronic Materials, E.A. Hudson, Lam Research Corp. |
| 8:40am | PS-FrM3 About the Surface Roughness Generated by Plasma Etching Processes M. Martin, G. Cunge, CNRS/LTM, France |
| 9:00am | PS-FrM4 Influence of Plasma Etch Processing Parameters on Morphological and Topographic Transformations of Advanced Photoresist Materials S. Engelmann, R.L. Bruce, T. Kwon, R. Phaneuf, University of Maryland, College Park, C. Andes, Rohm and Haas Electronic Materials, D.G. Nest, D.B. Graves, University of California, Berkeley, E.A. Hudson, Lam Research Corp., G.S. Oehrlein, University of Maryland, College Park |
| 9:20am | PS-FrM5 Effect of Charging on Twisting of Extremely High Aspect Ratio Features in Plasma Etching A. Agarwal, University of Illinois at Urbana-Champaign, M.J. Kushner, Iowa State University |
| 9:40am | PS-FrM6 Role of Additives (O2, CO and CO2) in NF3 Remote Plasma Etching of Si3N4 J.J. An, H.H. Sawin, Massachusetts Institute of Technology |
| 10:00am | PS-FrM7 Measurement of Modified Layer Formation of 193 nm Photoresist during Short Time Plasma Exposure M. Sumiya, Hitachi High-Technologies Corp., Japan and University of Maryland, R.L. Bruce, S. Engelmann, F. Weilnboeck, G.S. Oehrlein, University of Maryland |
| 10:20am | PS-FrM8 A Study on the Oxidation Properties of W Surface by O2 Plasma and Reduction of WOx Layer by H2 Plasma in Sub 50nm Patterning Process J.K. Kim, B.S. Kim, S.S. Jeong, T.H. Ahn, Samsung Electronics, South Korea |
| 10:40am | PS-FrM9 Model Analysis of the Ion Reflection on Surfaces and the Profile Evolution during Etching of Si in Chlorine- and Bromine-Containing Plasmas S. Irie, Kyoto University, Japan, M. Mori, N. Itabashi, Hitachi Ltd.,Japan, K. Eriguchi, K. Ono, Kyoto University, Japan |