| AVS 54th International Symposium | |
| Manufacturing Science and Technology | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | MS-ThM1 Measurement of GST Thin Film Composition and Thickness M. Ye, C.C. Wang, G. Conti, Applied Materials, Inc. |
| 8:20am | MS-ThM2 Gate Oxide Process Control Optimization by XPS in a Semiconductor Fabrication Line A. Le Gouil, N. Cabuil, P. Dupeyrat, STMicroelectronics, France, B. Dickson, M. Kwan, Revera, D. Barge, NXP, O. Doclot, STMicroelectronics, France, J.C. Royer, CEA/LETI-Minatec, France |
| 8:40am | MS-ThM3 Invited Paper The Helium Ion Microscope and Applications for Semiconductor Manufacturing and Characterization J. Notte, N.P. Economou, B. Ward, R. Hill, ALIS Corporation (Carl Zeiss SMT) |
| 9:20am | MS-ThM5 Invited Paper Characterization of Electronic Materials with Atom Probe Tomography T. Kelly, Imago Scientific Instruments |
| 10:00am | MS-ThM7 Structural Fingerprinting of Nanocrystals on the Basis of High Resolution Transmission Electron Microscopy and Open-Access Databases P. Moeck, Portland State University, P. Fraundorf, University of Missouri at St. Louis |
| 10:20am | MS-ThM8 The CD-AFM Technique as a Mean to Accelerate Advanced Process Development for the 45nm Node and Beyond J. Foucher, CEA-LETI-MINATEC, France, E. Pargon, LTM-CNRS, France, P. Faurie, CEA-LETI-MINATEC, France, M. Martin, LTM-CNRS, France |
| 10:40am | MS-ThM9 Analysis of Ion Implantation Damage in Silicon Wafers R.K. Ahrenkiel, University of Denver |