Invited Paper MS-ThM5
Characterization of Electronic Materials with Atom Probe Tomography

Thursday, October 18, 2007, 9:20 am, Room 615

Atom probe tomography provides three-dimensional structural and compositional analysis of materials at the atomic scale. It has been applied increasing frequently in the past few years to materials characterization challenges in the semiconductor industry. Specimen preparation advances have made it routine now to extract and analyze materials from wafers and even finished components. Major developments in LEAP technology by Imago Scientific Instruments have led to greater facility for running specimens and greater detail in quantitative analysis. Important examples of analyses of CMOS semiconductor structures and devices, thin-film multilayer structures, and even organic nanostructures will be shown.