| AVS 54th International Symposium | |
| Electronic Materials and Processing | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | EM-FrM1 Electrical Properties of High k Dielectrics Improved by Atomic Scale Nitrogen Depth Profile W.J. Maeng, H. Kim, POSTECH in Korea |
| 8:20am | EM-FrM2 Effect of Annealing Temperature on the Chemical Composition, Chemical Depth Profile,and Film Morphology of High-k Gate Dielectrics by AR-XPS and AFM G. Conti, G. Peydaye, C.C. Wang, T. Sato, Y. Uritsky, S. Hung, P. Liu, Applied Materials |
| 8:40am | EM-FrM3 Suppression of Ge-N Bonding at Ge-HfO2 and Ge-TiO2 Interfaces: Deposition on Nitrided Ge Surfaces, and Post-Deposition Annealing at 800°C G. Lucovsky, S. Lee, J.P. Long, North Carolina State University, J. Luening, SSRL |
| 9:00am | EM-FrM4 Effect of Strain Localization and Percolation on Defect States by Controlled Nitrogen Incorporation in Hf Si Oxynitride Alloys S. Lee, G. Lucovsky, L.B. Fleming, North Carolina State University, J. Luning, Stanford Synchrotron Radiation Laboratory |
| 9:20am | EM-FrM5 A Comparison of the Nucleation and Growth of HfO2 Thin Films Deposited by ALD Using TEMAH and TDMAH Precursors J.C. Hackley, UMBC, J.D. Demaree, Army Research Laboratory, T. Gougousi, UMBC |
| 9:40am | EM-FrM6 Material Characteristics and Electrical Properties of Hafnium Silicate Films Synthesized by Plasma Enhanced Atomic Layer Deposition J.R. Liu, R.M. Martin, M. Sawkar, J.P. Chang, University of California at Los Angeles |
| 10:00am | EM-FrM7 Band Alignment in Metal/Oxide/Semiconductor Stacks S. Rangan, E. Bersch, R.A. Bartynski, E. Garfunkel, Rutgers University |
| 10:20am | EM-FrM8 Thermal Stability of Rare Earth Oxides as High-k Gate Dielectrics S. Van Elshocht, C. Adelmann, T. Conard, A. Delabie, A. Franquet, IMEC vzw, Belgium, P. Lehnen, AIXTRON, Germany, L. Nyns, O. Richard, IMEC vzw, Belgium, J. Swerts, ASM Belgium, S. De Gendt, IMEC vzw, Belgium |
| 10:40am | EM-FrM9 Diffusion of La-based Layers on HfO2/SiO2/Si Dielectric Stacks M.I. Medina-Montes, The University of Texas at Dallas and Cinvestav-Queretaro, Mexico, M.V. Selvidge, F.S. Aguirre-Tostado, The University of Texas at Dallas, A. Herrera-Gomez, The University of Texas at Dallas and Cinvestav-Queretaro, Mexico, R.M. Wallace, The University of Texas at Dallas |
| 11:00am | EM-FrM10 Physical and Chemical Properties of Hf-based High-κ Dielectrics on Ge(001) for CMOS Applications F.S. Aguirre-Tostado, M. Milojevic, S.J. McDonnell, M.J. Kim, R.M. Wallace, University of Texas at Dallas |