| AVS 54th International Symposium | |
| Electronic Materials and Processing | Friday Sessions |
| Session EM-FrM |
| Session: | Hf-based Dielectrics and Their Interfaces |
| Presenter: | R.M. Wallace, University of Texas at Dallas |
| Authors: | F.S. Aguirre-Tostado, University of Texas at Dallas M. Milojevic, University of Texas at Dallas S.J. McDonnell, University of Texas at Dallas M.J. Kim, University of Texas at Dallas R.M. Wallace, University of Texas at Dallas |
| Correspondent: | Click to Email |
The growth of High-κ dielectrics on Ge has attracted substantial interest as a means to maintain integrated circuit scaling and performance. High-κ dielectrics on Ge studies have shown promising results in terms of low equivalent oxide thickness1 and enhanced hole mobility.2,3,4 For MOSFET applications, the thermal stability of gate dielectrics is a requirement for an appropriate CMOS flow. This paper will describe the thermal stability studies of HfGeON gate dielectrics on Ge for several nitrogen concentrations. The structure and chemistry of the HfGeON/Ge(001) layers are studied using HRTEM, XRD and in-situ XPS and LEISS. Sputter deposited HfGeON films on atomically clean Ge epi-layers grown by MBE on Ge(001) substrates are investigated. Corresponding electrical characterization of the associated devices will also be described in view of the thermal budget where the maximum process temperature is ~500°C. This work is supported by the MARCO MSD Focus Center.
1C.O. Chui, S. Ramanathan, P.C. McIntyre, and K.C. Saraswat, IEEE Elec. Dev. Lett. 23, (2002) 473.
2C. H. Huang, et. al., in Symp. VLSI Tech. Dig., 2003, pp. 119-120.
3C. Chui, H. et.al., in IEDM Tech. Dig., Dec. 2002, pp. 437-440.
4W. P. Bai, et.al., in Symp. VLSI Tech. Dig., 2003, pp. 121-122.