| AVS 54th International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
| Session PS2-TuA |
| Session: | Plasma Sources |
| Presenter: | S.-O. Lee, HYNIX Semiconductor Inc., Republic of Korea |
| Authors: | S.-O. Lee, HYNIX Semiconductor Inc., Republic of Korea M.-S. Lee, HYNIX Semiconductor Inc., Republic of Korea S.-H. Cho, HYNIX Semiconductor Inc., Republic of Korea Y.-S. Cho, HYNIX Semiconductor Inc., Republic of Korea S.-C. Moon, HYNIX Semiconductor Inc., Republic of Korea J.-W. Kim, HYNIX Semiconductor Inc., Republic of Korea |
| Correspondent: | Click to Email |
The characteristics of negative external DC superposition with the top electrode in dual frequency C4F6/O2/Ar gas capacitively coupled plasma (CCP) on the selective etching of SiO2 over Si3N4 have been studied as a function of supplying DC voltage, ranging from 0V to -1500V. It is reported that the accelerated 2nd electron which is generated near top electrode sheath by using DC superposition irradiates the wafer, and polymer molecular structure such as C/F ratio and C-C bond structure etc. is reformed. To analyze the effect of DC superposition in dual frequency CCP source, we investigated the chemical species such as CF2 radicals and other radicals that have influence on polymerization, in the gas phase with optical emission spectroscopy (OES). The thickness and components of fluorocarbon polymer on etched surface were investigated with high resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS).