Invited Paper PS1-MoM3
Vertically Integrated Computer Aided Design for Devices Process

Monday, October 15, 2007, 8:40 am, Room 606

We had our opportunity to propose a relaxation continuum (RCT) model for a low temperature radio-frequency plasma in 1988 in GEC.¹ In 2000 we presented a vertically integrated computer aided design for device processes (VicAddress) in RGD.² With the aid of VicAddress described by a hybrid model consisting of the RCT model and particle model, a series of modeling has been carried out for the prediction and the design for a space- and time-resolved plasma structure, sheath dynamics of reactive species, a feature profile evolution, and the damage to a lower level device element during plasma etching.³ These are a typical example of the multi-scale system. In this talk, we will review the dry etching of dielectric SiO2 in CF4/Ar⁴ and organic low-k material in N2/H2⁵ under competitive processes among charging, deposition, and etching at each of local positions of a geometrical structure by considering two-layers, intrinsic (or mixing layer) and an overlaying polymer layer in a two-frequency capacitively coupled plasma on the basis of a database of etching yield. Also a Si deep etching with several hundreds of micrometers such that used in MEMS fabrication is predicted under an effect of plasma molding, and the effect of ions, F-radicals, and oxygen radicals on the feature profile is investigated in SF6/O2 in 2f-CCP.⁶

¹T. Makabe, 41st GEC (Minneapolis)(1988).
²T. Makabe, 22nd Int. Symposium on Rarefied Gas Dynamics (Sydney) (2000).
³T. Makabe and Z. Petrovic, "Plasma Electronics: Applications in Microelectronic Device Fabrication", Taylor & Francis (New York) (2006).
⁴T. Shimada, T. Yagisawa, and T. Makabe, Jpn. J. Appl. Phys. 45, 8876 (2006).
⁵K. Ishihara, T. Shimada, T. Yagisawa, and T. Makabe, Plasma Physics and Controlled Fusion, 48, B99 (2006).
⁶F. Hamaoka, T. Yagisawa, and T. Makabe, IEEE TPS (accepted for publication).