AVS 54th International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS1+TF-TuM

Paper PS1+TF-TuM3
Pulsed Plasma-Enhanced Pulsed CVD of Y2O3 in MIM Capacitors

Tuesday, October 16, 2007, 8:40 am, Room 606

Session: Plasma Enhanced Atomic Layer Deposition and Plasma Deposition
Presenter: C, Vallee, CNRS, France
Authors: C, Vallee, CNRS, France
M. Kahn, CNRS, France
E. Gourvest, CNRS, France
M. Bonvalot, CNRS, France
O. Joubert, CNRS, France
Correspondent: Click to Email

The development of integrated metal-insulator-metal (MIM) capacitors for advanced analog and rf circuits aims at achieving development of capacitors with higher capacitance density, low leakage current, and good voltage linearity. High k materials are thus integrated and evaluated as MIM dielectrics. Moreover, system-on-chip (SOC) applications also require a deposition process with a low thermal budget which can be carried out with a plasma deposition process. In the past, we have shown interesting results on MIM capacitors based on Y2O3 materials deposited by a low temperature process, namely pulsed liquid injection MOCVD assisted or not by a capacitive RF plasma. With the plasma, depositions have been achieved at temperatures as low as 300°C, and for this reason, good results have been obtained with TiN as bottom electrode. Without plasma, the deposition takes place at 450°C and a non desirable TiOx interface is formed, which degrades the MIM electrical properties. In this study, we compare Y2O3 MIM capacitors deposited on WSi2.3 substrates when assisting the pulsed CVD process by a pulsed RF plasma instead of a continuous plasma. With WSi2.3 substrates, the interfacial layer is SiO2-like, which can be beneficial to the MIM electrical properties in terms of linearity behavior. The plasma is pulsed either in phase or out of phase with the pulsed liquid injection of precursors. Moreover, depending on the plasma pulse width and frequency, the plasma can play a role in precursor dissociation and CVD post-deposition in-situ annealing treatment. The electrical behavior C(V) and I(V) of the obtained structures will be presented and discussed in terms of capacitance density, capacitance linearity and leakage currents. They will be correlated to chemical analysis results (XPS and FUV-SE), with special attention devoted to carbon content as well as metal/oxide interface investigations. C(V) curves suggest the presence of positive charges in the oxide, some of which are mobile, when the plasma is continuously applied. In this study, we will show the impact of exposure time of the dielectric to the plasma on the amount of trapped positive charges in the oxide affecting the MIM linearity properties. Moreover, the nature and thickness of the interfacial dielectric layer originate from both oxygen and solvent which can be limited by pulsing the plasma.