AVS 54th International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS1+TF-TuM

Paper PS1+TF-TuM13
Correlation of Surface Reactivity and Gas Phase Properties of CN Active Species in the Plasma Deposition of Carbon Nitride

Tuesday, October 16, 2007, 12:00 pm, Room 606

Session: Plasma Enhanced Atomic Layer Deposition and Plasma Deposition
Presenter: J. Stillahn, Colorado State University
Authors: J. Stillahn, Colorado State University
D. Liu, Dalian Nationalities University, China
E.R. Fisher, Colorado State University
Correspondent: Click to Email

Amorphous carbon nitride materials have generated interest due to their potential for commercial applications. One of the possible precursors in the plasma enhanced chemical vapor deposition (PE-CVD) of carbon nitride is the CN radical, but its role in the deposition process is still unclear. In an effort to clarify the processes taking place during film formation, carbon nitride deposition systems have been studied in rf inductively coupled plasmas by utilizing acetonitrile (CH3CN) as a film precursor to allow direct generation of CN active species. The imaging of radicals interacting with surfaces (IRIS) technique has been utilized in our lab to provide a measure of the surface reactivity of the CN radical, R(CN), in these systems. Preliminary results indicate that CN radicals formed in acetonitrile plasmas react with near unit probability during deposition of a-CNx:H films. Results from IRIS studies using other CN precursors will also be discussed. Characterization of gas phase species in these deposition systems has also been performed using spectroscopic and mass spectrometric (MS) methods. MS measurements are consistent with the direct formation of CN active species, and mass spectra are dominated by ions formed by the loss of CN from the parent molecule. Measurement of the relative number density of gas phase CN radicals by laser-induced fluorescence (LIF) spectroscopy indicates that increases in CN radical production due to increases in the pressure of the precursor gas or applied rf power give way to plateau behavior at higher values for both pressure and power. LIF measurements of the rotational temperature of CN radicals yield values near 320 K, suggesting that the rotational energy of CN radicals is re-distributed to maintain near-equilibrium conditions in the plasma. These data, along with film formation and characterization studies, will be discussed with respect to the information that they provide about the deposition process and their implications for continuing work in this area.