AVS 54th International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS1+TF-TuM

Paper PS1+TF-TuM11
Film Microstructure Control and Characterization of Ion Bombardment- Aided Remote Plasma Deposition of Silicon Dioxide Films

Tuesday, October 16, 2007, 11:20 am, Room 606

Session: Plasma Enhanced Atomic Layer Deposition and Plasma Deposition
Presenter: M.A. Creatore, Eindhoven University of Technology, the Netherlands
Authors: M.A. Creatore, Eindhoven University of Technology, the Netherlands
N.M. Terlinden, Eindhoven University of Technology, the Netherlands
M.C.M. van de Sanden, Eindhoven University of Technology, the Netherlands
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The control on thin film growth and microstructure in plasma deposition is a challenging issue. For example, in the case of an inorganic layer on an organic substrate (e.g., SiO2 on polymers), the organic/ inorganic interphase affects the bulk inorganic properties, such as adhesion and moisture permeation barrier performance. Within this framework, ion bombardment- aided remote plasma deposition of SiO2 layers, deposited from a hexamethyldisiloxane/O2 chemistry, is carried out: the purpose is to engineer an interphase allowing the growth of dense, yet adhesive barrier films. This control is achieved by coupling the use of ion bombardment with a graded growth flux, obtained by a gradient (e.g. a decrease) in the hexamethyldisiloxane flow rate during film growth. At constant substrate bias voltage, i.e. constant ion energy, this gradient allows to tune the ion-to-growth flux ratio and the film densification. Initially, an adhesive porous layer is deposited, gradually shifting towards a highly dense barrier layer, due to the increase in the ion-to-growth flux ratio. The role of ion bombardment on the film microstructure is investigated by means of ellipsometric porosimetry, which monitors the refractive index (n) change due to the adsorption (and desorption) of ethanol vapors in the volume of macro-meso-micro pores in the layer. From the analysis of the adsorption isotherm and the presence of hysteresis during the desorption step as a function of the equilibrium partial pressure, the open porosity and the pore volume distribution can be extracted. In the absence of ion bombardment porous (n= 1.35-1.38) layers are characterized by an isotherm shape mimicking the structure of disordered mesoporous films (pore diameter in the range of 2-50 nm), i.e. a very broad distribution in pore size and shape, resulting in 20% porosity. A progressive increase in substrate bias voltage leads towards film densification (n=1.46) and induces a change in the isotherm: the adsorption/desorption process becomes reversible since unrestricted ethanol multilayer adsorption occurs on the non- porous surface. When a mild ion bombardment (ion energy of 20 eV) is accompanied by an increasing ion-to-growth flux ratio, both the isotherm and the hysteresis behavior exhibit the transition from meso- to microporosity (pore diameter less than 2 nm). The implications in terms of porosity determination in barrier layers deposited on polymeric substrates will be also addressed.