| AVS 54th International Symposium | |
| Plasma Science and Technology | Thursday Sessions |
| Session PS-ThP |
| Session: | Plasma Science and Technology Poster Session |
| Presenter: | S.R. Kirkpatrick, University of Nebraska-Lincoln |
| Authors: | S.R. Kirkpatrick, University of Nebraska-Lincoln J. Li, University of Nebraska-Lincoln S.L. Rohde, University of Nebraska-Lincoln |
| Correspondent: | Click to Email |
Various High Power Pulsed Magnetron Sputtering (HIPIMS) voltage levels are compared in terms of their equivalent ionization potentials using a "filtered" HIPIMS source and monitoring of a pair of quartz crystal monitors. One monitor is mounted in front of the cathode; the other is mounted perpendicular to the cathode, at the end of a coil similar to those used in filtered arc systems. A ninety degree open coil ion filter was placed 4cm from the target surface. Relative ionization rates for various applied voltages and materials are estimated through the ratio of deposition on each crystal monitor. Deposition rates for copper and titanium are observed on the "filtered" monitor both when the coil is on and off for comparison. Depositions were performed using pressures ranging from 3 to 5mTorr, and rates were found at the end of the ion filter to be more than double those of the unfiltered region. These results indicate that very high levels of ionization and directed deposition can be achieved using HIPIMS sources.