| AVS 54th International Symposium | |
| Plasma Science and Technology | Thursday Sessions |
| Session PS-ThP |
| Session: | Plasma Science and Technology Poster Session |
| Presenter: | J.K. Park, Sungkyunkwan University, Korea |
| Authors: | J.K. Park, Sungkyunkwan University, Korea J.H. Lim, Sungkyunkwan University, Korea K.N. Kim, Sungkyunkwan University, Korea G.Y. Yeom, Sungkyunkwan University, Korea |
| Correspondent: | Click to Email |
Inductively coupled plasmas (ICP) have been investigated for the processing of semiconductors and flat panel display devices as one of the high density (1011 ~ 1012 cm-3) and low gas pressure plasma sources. Especially, ICP was the most attractive among the high density plasma sources due to the advantages of simple physics and a simple source structure requiring no external magnetic field. In fact, as the plasma sources for the dry etching, even though capacitively coupled plasma (CCP) sources are currently utilized for the etching of thin film transistor-liquid crystal display (TFT-LCD) devices, to improve the throughput of the TFT-LCD device processing, high density plasma sources are preferred compared to the conventional CCP sources due to their higher processing speed. In this work, an internal-type antenna (double-comb type antenna) was used as an inductively coupled plasma (ICP) source for an extremely large area (2,300 mm x 2,000 mm) processing and its plasma and electrical characteristics were investigated using a Langmuir probe and an impedance probe, respectively. Also, the etch characteristics of the photoresist (PR), such as the etch rates and etch uniformities on the large area substrate by oxygen plasma were investigated. The results showed a strong dependence of the plasma characteristics such as plasma density and uniformity on the antenna arrangement, and, for an optimized condition, the PR etch uniformity less than 13% could be obtained within the substrate area.