| AVS 54th International Symposium | |
| Plasma Science and Technology | Thursday Sessions |
| Session PS-ThP |
| Session: | Plasma Science and Technology Poster Session |
| Presenter: | H.T. Kim, Sungkyunkwan University, Korea |
| Authors: | H.T. Kim, Sungkyunkwan University, Korea B.S. Kwon, Sungkyunkwan University, Korea N.-E. Lee, Sungkyunkwan University, Korea H.J. Cho, Sungkyunkwan University, Korea B.Y. Hong, Sungkyunkwan University, Korea |
| Correspondent: | Click to Email |
In this study, we investigated the fabrication process of multi-level resist (MLR) based on thin physical-vapor deposited (PVD) amorphous carbon (α-C) layer. Due to difficulty of patterning PVD α-C with a very high plasma resistance, etching characteristics of PVD α-C layer with the SiO2 hard-mask were investigated in a DFS-CCP (dual-frequency superimposed capacitively coupled plasma) etcher by varying the process parameters such as different high-frequency/low-frequency combination (fHF/fLF), HF/LF power ratio (PHF/PLF), O2 and N2 flow rates in O2/N2/Ar plasmas. The results indicated an increased etch rate of PVD α-C for the higher fHF/fLF combination and for the increased low-frequency power (PLF). And the etch rate of PVD α-C was initially increased and then decreased with increasing the N2 flow rate in O2/N2/Ar plasmas. Application of PVD α-C layer as a mask for etching of the TEOS-oxide in the stack of ArF PR/BARC/SiO2/PVD α-C/TEOS-oxide/Si indicated a possibility of using a very thin PVD α-C layer as a mask layer in the MLR structure.