| AVS 54th International Symposium | |
| Plasma Science and Technology | Thursday Sessions |
| Session PS-ThP |
| Session: | Plasma Science and Technology Poster Session |
| Presenter: | D.Y. Kim, Sungkyunkwan University, Korea |
| Authors: | D.Y. Kim, Sungkyunkwan University, Korea H.J. Lee, Sungkyunkwan University, Korea H.Y. Jung, Sungkyunkwan University, Korea N.-E. Lee, Sungkyunkwan University, Korea T.G. Kim, Hanyang University, Korea B.H. Kim, Hanyang University, Korea J. Ahn, Hanyang University, Korea C.Y. Kim, Hanyang University, Korea |
| Correspondent: | Click to Email |
Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. Among the core EUVL technologies, mask fabrication is also of great importance. In this work, we investigated etching properties of the EUVL mask materials such as Al2O3 (ARC : anti-reflected coating layer), TaN (absorber layer), Ru (buffer/capping layer) and Mo/Si multi-layer (reflective layer) in inductively coupled plasmas. Etch rate and etch selectivity of the mask materials were investigated by varying the gas flow, DC self-bias voltage (Vdc) and top electrode power. Based on the etch results of each layer, etching of stacked mask structures were carried out. The Al2O3 ARC layer could be etched with the etch selectivity close to 0.5 over the TaN absorber layer. The ARC/TaN stack could be etched with a high etch selectivity over the Ru buffer/capping layer.