| AVS 66th International Symposium & Exhibition | |
| Plasma Science and Technology Division | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | PS+2D+EM+SS+TF-ThA1 Invited Paper Atomic Layer Etch: Real World Utilization of an Idealized Solution Peter Biolsi, TEL Technology Center, America, LLC |
| 3:00pm | PS+2D+EM+SS+TF-ThA3 Mechanism of SiN Etching Rate Fluctuation in Atomic Layer Etching Akiko Hirata, M. Fukasawa, K. Kugimiya, K. Nagaoka, Sony Semiconductor Solutions Corporation, Japan, K. Karahashi, S. Hamaguchi, Osaka University, Japan |
| 3:20pm | PS+2D+EM+SS+TF-ThA4 Effect of Polymerization on Ar+ Bombardment Modification of SiO2 and Si3N4 Substrates: Molecular Dynamics Simulation Study Hojin Kim, Y. Shi, Y.-H. Tsai, D. Zhang, Y. Han, TEL Technology Center, America, LLC, K. Taniguchi, S. Morikita, TEL Miyagi Limited, M. Wang, A. Mosden, A. Metz, P.E. Biolsi, TEL Technology Center, America, LLC |
| 4:00pm | PS+2D+EM+SS+TF-ThA6 Invited Paper Advanced Cyclic Plasma Etch Approaches for Metal Patterning: Synergy and Surface Modification Effects Nathan Marchack, IBM T.J. Watson Research Center, K. Hernandez, University of Texas at Dallas, J. Innocent-Dolor, M.J.P. Hopstaken, S.U. Engelmann, IBM T.J. Watson Research Center |
| 4:40pm | PS+2D+EM+SS+TF-ThA8 Surface Modification and Stability of Plasma-assisted Atomic-layer Etching (ALE) of Si based Materials; Analysis by Molecular Dynamics (MD) Simulation Satoshi Hamaguchi, M. Isobe, E.J.C. Tinacba, S. Shigeno, Y. Okada, T. Ito, K. Karahashi, Osaka University, Japan |
| 5:00pm | PS+2D+EM+SS+TF-ThA9 Invited Paper Innovative Future Etch Technology by Atomic-order Control Yoshihide Kihara, T. Katsunuma, S. Kumakura, T. Hisamatsu, M. Honda, Tokyo Electron Miyagi Ltd., Japan |