| AVS 66th International Symposium & Exhibition | |
| Atomic Scale Processing Focus Topic | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:40am | AP+2D+EM+PS+TF-MoM2 Surface Pre-functionalization of SiNx and SiO2 to Enhance Selectivity in Plasma‑Assisted Atomic Layer Etching Ryan Gasvoda, Colorado School of Mines, Z. Zhang, S. Wang, E.A. Hudson, Lam Research Corporation, S. Agarwal, Colorado School of Mines |
| 9:00am | AP+2D+EM+PS+TF-MoM3 Area-selective Atmospheric-pressure Spatial ALD of SiO2 using Interleaved Back-etch steps Yielding Selectivity > 10 nm A. Mameli, F. Roozeboom, Paul Poodt, Holst Centre / TNO, The Netherlands |
| 9:20am | AP+2D+EM+PS+TF-MoM4 Mechanisms of Precursor Blocking during Area-selective Atomic Layer Deposition using Inhibitors in ABC-type Cycles M.J.M. Merkx, Eindhoven University of Technology, The Netherlands, D.M. Hausmann, Lam Research Corporation, W.M.M. Kessels, Eindhoven University of Technology, The Netherlands, T.E. Sandoval, Universidad Técnica Federico Santa María, Chile, Adrie Mackus, Eindhoven University of Technology, The Netherlands, Nederland |
| 9:40am | AP+2D+EM+PS+TF-MoM5 Invited Paper Area-Selective Deposition of TiO2 using Isothermal Integrated Atomic Layer Deposition and Atomic Layer Etching in a Single Reaction Chamber Gregory Parsons, S.K. Song, H. Saare, North Carolina State University |
| 10:40am | AP+2D+EM+PS+TF-MoM8 Area-Selective Atomic Layer Deposition of Metal Oxides on an Inhibitor-Functionalized SiO2 Surface Wanxing Xu, Colorado School of Mines, P.C. Lemaire, K. Sharma, D.M. Hausmann, Lam Research Corporation, S. Agarwal, Colorado School of Mines |
| 11:00am | AP+2D+EM+PS+TF-MoM9 Area-selective Deposition Achieved in a Continuous Process using Competitive Adsorption Taewon Suh, Y. Yang, K.U. Lao, R.A. DiStasio, Jr., J.R. Engstrom, Cornell University |
| 11:20am | AP+2D+EM+PS+TF-MoM10 Invited Paper Surface Chemistry during Plasma-Assisted ALE: What Can We Learn from ALD? Sumit Agarwal, Colorado School of Mines |