AVS 66th International Symposium & Exhibition
    Thin Films Division Monday Sessions
       Session TF+EM+MI+MN+OX+PS-MoM

Paper TF+EM+MI+MN+OX+PS-MoM10
Ferroelectrics Meet Ionics in the Land of van der Waals

Monday, October 21, 2019, 11:20 am, Room A122-123

Session: Functional Thin Films: Ferroelectric, Multiferroics, and Magnetic Materials
Presenter: Petro Maksymovych, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Authors: S. Neumayer, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
J. Brehm, Vanderbilt University
M.A. McGuire, Oak Ridge National Laboratory
M.A. Susner, Air Force Research Laboratory
E. Eliseev, National Academy of Sciences of Ukraine
S. Jesse, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
S.V. Kalinin, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
A.N. Morozovska, National Academy of Sciences of Ukraine
S. Pantelides, Vanderbilt University
N. Balke, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
P. Maksymovych, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Correspondent: Click to Email

Van der Waals crystals of metal thiophosphates can be thought of as derivatives of transition metal dichalcogenides where 1/3 of metal atoms is replaced with diphosphorous, thereby stabilizing the remaining 2/3 of metal ions in low oxidation states.1 Consequently, thiophosphates enable ultrathin magnetic, ferroelectric and Mott insulating materials, in q2D materials while also providing new opportunities for multifunctional interfaces .

Of particular interest is CuInP2S6, where ferroelectricity emerges out of ionically conducting state .2,3 In this work, we discuss unusual and perhaps anomalous properties observed in CuInP2S6 in both states.

CuInP2S6 exhibits giant negative electrostriction (Q33 = -3.2 m4/C2), which leads to large piezoelectric coefficients despite small polarization values and increase of Tc with applied pressure. It's the only material other than polymer PVDF for which such behavior is experimentally confirmed. Density functional theory reveals that the reason for negative electrostriction is a slight movement of Cu ions into the van der Waals gap due to anharmonicity of the potential well.4 Moreover, under high compressive strain, Cu starts to form interlayer bonds with sulfur across the van der Waals gap, leading to an additional phase of high polarization. Consequently, the potential distribution exhibits 4 instead of the usual two minima - a quadruple well, that is precisely tunable by strain. In the paraelectric state above ~70°C, Cu ion mobility drastically increases. Intriguingly, Cu can be reversibly extracted out of the lattice without visible damage. Finally, the selenide sibling CuInP2Se6, exhibits a lower transition temperature and propensity toward antiferroelectric ordering under the effect of depolarizing fields. In this material, we have for the first time observed piezoelectric response confined to domain walls (opposite to ferroelectrics), fulfilling the long-standing predictions for polar antiferroelectric domain walls and providing a new model system for emergent properties of topological defects in ferroic order parameter fields.

Research sponsored by Division of Materials Science and Engineering, Basic Energy Sciences, US Department of Energy. Microscopy was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility.

1Susner et al, Adv. Mater. 29,1602852 (2018)

2Neumayer et al, Phys. Rev. Materials 3, 024401 (2019)

3Balke et al, ACS Appl. Mater. Interfaces 10, 27188 (2018)

4Brehm et al, in review