AVS 66th International Symposium & Exhibition
    Frontiers of New Light Sources Applied to Materials, Interfaces, and Processing Focus Topic Thursday Sessions
       Session LS+AC+HC+SS-ThA

Paper LS+AC+HC+SS-ThA7
Imaging with XPS: Advanced Characterization for Advanced Materials and Devices

Thursday, October 24, 2019, 4:20 pm, Room A210

Session: Emerging Methods with New Coherent Light Sources
Presenter: Tatyana Bendikov, Weizmann Institute of Science, Israel
Authors: T. Bendikov, Weizmann Institute of Science, Israel
H. Kaslasi, Weizmann Institute of Science, Israel
E. Sanders, Weizmann Institute of Science, Israel
E. Joselevich, Weizmann Institute of Science, Israel
D. Cahen, Weizmann Institute of Science, Israel
Correspondent: Click to Email

X-ray Photoelectron Spectroscopy (XPS), as a surface sensitive technique with the sensitivity down to single atomic layer, provides unique information about elemental composition and chemical and electronic states of elements in the material. For some research goals, however, this knowledge is not sufficient as it does not provide the entire information required for a comprehensive characterization of the investigated system. In addition to the basic functions of standard XPS, our instrument is equipped with advanced capabilities such as XPS imaging, which is particularly valuable in the analysis of patterned or inhomogeneus specimens. Following image acquisition, specific areas can thus be chosen and small spot XP spectra acquired at sites of particular interest. This information is useful in the characterization of patterned surfaces or inhomogeneous samples with surface features between several to hundreds of micrometers.

We present here two examples where XPS imaging is successfully used providing crucial information for understanding the investigated systems.

In the first example bunches of GaN nanowires (50-100 nm each) randomly spread on Si substrate were monitored with XPS imaging. Then, focusing on the GaN bunch itself, small area XP spectra were obtained. This allowed to get precise top surface composition of the bunches significantly consuming the analysis time.

In the second example variations in chemical composition though dimensions of the CsxMa1-xPbBr3 (MA = CH3NH3)

crystal were studied using XPS imaging. Significant changes in the N/Cs ratio, depending on the distance from the crystal edge/center, were observed on the top surface. Variations in the N/Cs and Pb/(N+Cs) ratios were also observed along the crystal bulk.