| AVS 66th International Symposium & Exhibition | |
| Applied Surface Science Division | Thursday Sessions |
| Session AS-ThM |
| Session: | Advances in Depth Profiling, Imaging and Time-resolved Analysis |
| Presenter: | M. K. Indika Senevirathna, Clark Atlanta University |
| Authors: | M.K.I. Senevirathna, Clark Atlanta University A.Y. Kozhanov, Georgia State University M. Vernon, Georgia State University G.B. Cross, Georgia State University G. Cooke, Hiden Analytical Ltd, UK M.D. Williams, Clark Atlanta University |
| Correspondent: | Click to Email |
We present a study of the secondary ion yield of silicon and magnesium dopant species as a function of the primary ion beam energy in n-doped and p-doped gallium nitride, respectively. The epilayers were grown by metal organic chemical vapor deposition and depth profiled using a Hiden quadrupole secondary ion mass spectrometer. To our knowledge, this is the first such study for this matrix material system. The yields for oxygen and cesium primary beams were determined by varying the beam acceleration voltage of the primary ion beam from 0.5 kV to 5 kV at a fixed beam current. The results determine the primary beam energies for optimal species sensitivity.