AVS 66th International Symposium & Exhibition
    Applied Surface Science Division Tuesday Sessions
       Session AS+BI+CA+LS-TuA

Paper AS+BI+CA+LS-TuA9
Characterization of Electronic Materials using Low Energy Inverse Photoemission Spectroscopy

Tuesday, October 22, 2019, 5:00 pm, Room A211

Session: Beyond Traditional Surface Analysis
Presenter: Benjamin Schmidt, Physical Electronics
Authors: B.W. Schmidt, Physical Electronics
J.G. Newman, Physical Electronics
J.E. Mann, Physical Electronics
K. Artyushkova, Physical Electronics
L. Swartz, Physical Electronics
M. Terashima, ULVAC-PHI Inc., Japan
T. Miyayama, ULVAC-PHI Inc., Japan
Correspondent: Click to Email

The development of complex electronic materials in areas such as batteries, solar cells, and flexible display panels require a detailed knowledge of the electronic band structure in order to achieve desired performance. A few of the material properties of interest are electron affinity, work function, ionization potential, and bandgap. Photoemission spectroscopic techniques such as Ultraviolet Photoelectron Spectroscopy (UPS) and Inverse Photoemission Spectroscopy (IPES) have traditionally been used to measure these values.

Organic electronic materials are growing in popularity due to lower costs of production and the ability to create interesting mechanical structures. However, they are susceptible to chemical damage with prolonged exposure to high-energy electron beams during analyses, which can affect the measured properties.

Low Energy Inverse Photoemission Spectroscopy (LEIPS) is a variant of IPES but uses an incident electron beam at lower energy than traditional IPES (< 5 eV vs. ~10 eV, respectively), making it less damaging for organic materials. In this talk, the operating principles of LEIPS will be discussed. Several material system examples will be shown, including films of C60 and copper phthalocyanine (CuPc).