AVS 66th International Symposium & Exhibition
    2D Materials Friday Sessions
       Session 2D-FrM

Paper 2D-FrM9
The Electronic Properties of Quasi-One-Dimensional TiS3 and ZrS3

Friday, October 25, 2019, 11:00 am, Room A215

Session: 2D Late News Session
Presenter: Simeon Gilbert, University of Nebraska-Lincoln
Authors: S. Gilbert, University of Nebraska-Lincoln
H. Yi, Synchrotron SOLEIL
A. Lipatov, University of Nebraska-Lincoln
T. Komesu, University of Nebraska-Lincoln
A.J. Yost, Oklahoma State University
A. Sinitskii, University of Nebraska-Lincoln
J. Avila, Synchrotron SOLEIL, France
M.C. Asensio, Madrid Institute of Materials Science
P.A. Dowben, University of Nebraska-Lincoln
Correspondent: Click to Email
The transition metal trichalcogenides (TMTs) are an emerging class of 2D materials in which 2D sheets are formed by the van der Waals-like bonding of quasi-1D chains. Here we present our work on the electronic properties of two TMTs, TiS3 and ZrS3, including the experimental band structure from nanospot angle resolved photoemission spectroscopy (nanoARPES). The band structures of both TMTs exhibit strong in-plane anisotropy due to their quasi-1D structure. The extracted effective hole mass for both materials is doubled along the chain direction, giving rise to a preferential charge transport direction. Additionally, high resolution nanoARPES measurements show a spin-orbit coupling splitting at the top of the valence band in TiS3. This spin-orbit coupling splitting is expected to increase for heavier TMTs such as ZrS3. We also show that metals such as Au and Pt can form Ohmic contacts with TMTs rather than Schottky barriers using X-ray photoemission spectroscopy at the metal-semiconductor interface. Other advantages of TMTs include clean edge termination, band gaps of ~1eV and high predicted electron mobilities. Combined with their anisotropic electron transport, strong spin-orbit coupling and Ohmic contacts, these advantages make the TMTs strong candidates for use in nanoscale electronics, optoelectronics and spintronics.