| AVS 66th International Symposium & Exhibition | |
| 2D Materials | Friday Sessions |
| Session 2D-FrM |
| Session: | 2D Late News Session |
| Presenter: | Fernando Cesar Rufino, UNICAMP, Brazil |
| Authors: | F.C. Rufino, UNICAMP, Brazil A.M. Pascon, UNICAMP, Brazil D.R.G. Larrudé, Mackenzie Presbyterian University, Brazil L. Espindola, UNICAMP, Brazil F.H. Cioldin, UNICAMP, Brazil J.A. Diniz, UNICAMP, Brazil |
| Correspondent: | Click to Email |
The excellent physical properties of graphene [1], such as transport (high electron mobility 250000 cm2/Vs), elasticity (in the order of TPa) and mechanical strength (in the order of GPa), make this 2D material a strong candidate in electronic devices development, especially in the area of radiofrequency and applications in sensors. In researches related to electronic devices, graphene can be a great ally in the development and miniaturization of Field Effect Transistors, FET. Concerns related to the miniaturization process are the equipment and the materials necessary to achieve this objective, since the repeatability and the cost of the manufacturing process are two essential variables to ensure the viability of the proposed project.
In this work, we present the union of conventional techniques in the fabrication of microdevices and the application of graphene obtained by chemical vapor deposition (CVD), in the development of Field Effect Transistors based on Graphene, GFET [2]. In the fabricated GFETs, the conduction channel is formed by parallel micro ribbons of graphene, with the smallest dimension of 250 nm of width. This dimension was obtained by Photolithography and oxygen plasma ashing. Through these two techniques we can ensure the repeatability of the fabrication process and these are low cost techniques when compared to what is commonly found in the literature, which is the definition of graphene patterns by Electron Beam Lithography (high cost and low repeatability technique). In addition, the characteristics of good quality graphene remain at the end of the fabrication process, as proven by Raman spectroscopy.
The GFETs were fabricated on two different substrates. One on Si/SiO2 and another on glass. In both materials, the same structures with the same parameters were fabricated and were able to reach dimensions in the order of 360 nm, for comparisons we used Atomic Force Microscope (AFM) to verify the roughness and Scanning Electronics Microscope (SEM) for detection and measurement of the structures. The graphene used in the fabrication of the devices was the last material to be transferred to the sample by fishing and using PMMA [3], ensuring the least possible handling of the material and therefore possible contaminations.
References:
[1] K. S. Novolselov et al, Science 306, 666 (2004).
[2] F. C. Rufino et al, SBMicro 2018.
[3] L. Jiao et al., Am. Chem. Soc., 12612 (2008).