| AVS 65th International Symposium & Exhibition | |
| Thin Films Division | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | TF+EM+MI-WeM1 Invited Paper Crystalline Conductors: Transition Metal Nitride Materials and Device Applications David Meyer, D.S. Katzer, N. Nepal, B.P. Downey, M.T. Hardy, D.F. Storm, U.S. Naval Research Laboratory |
| 8:40am | TF+EM+MI-WeM3 Growth Mechanism and Characteristics of Hf-Si-O Film by PE-ALD using TDMAS and TDMAH Precursors and Oxygen Plasma Gas Toshihide Nabatame, National Institute for Materials Science (NIMS), Japan, M. Inoue, National Institute for Materials Science (NIMS), E. Maeda, K. Yuge, M. Hirose, Shibaura Institute of Technology, Japan, M. Takahashi, K. Ito, Joining and Welding Research Institute, Osaka University, Japan, N. Ikeda, National Institute for Materials Science (NIMS), Japan, T. Ohishi, Shibaura Institute of Technology, Japan, A. Ohi, National Institute for Materials Science (NIMS), Japan |
| 9:00am | TF+EM+MI-WeM4 Atomic Layer Epitaxy of Ultra-wide Bandgap Ga2O3 Films Virginia Wheeler, N. Nepal, U.S. Naval Research Laboratory, L.O. Nyakiti, Texas A&M University, D.R. Boris, S.G. Walton, B.P. Downey, D.J. Meyer, U.S. Naval Research Laboratory, C.R. Eddy, Jr., U. S. Naval Research Laboratory |
| 9:20am | TF+EM+MI-WeM5 Effects of Process Gases and Gate TiN Electrode during the Post Deposition Anneal to ALD-Al2O3 Dielectric Film Masaya Saito, A. Teramoto, T. Suwa, K. Nagumo, Y. Shiba, R. Kuroda, S. Sugawa, Tohoku University, Japan |
| 9:40am | TF+EM+MI-WeM6 Controlling the NbOxMaterials System for Neuromorphic Computing Alexander C. Kozen, U.S. Naval Research Laboratory, Z.R. Robinson, A.H. Rowley, The College at Brockport - SUNY, T.J. Larrabee, M.E. Twigg, H.S. Cho, S.M. Prokes, U.S. Naval Research Laboratory |
| 11:00am | TF+EM+MI-WeM10 Sputtering Power Dependent on Switching Characteristics of ZnO-based Transparent Resistive Memory Devices Firman Mangasa Simanjuntak, Tohoku University, Japan, T. Ohno, Oita University, Japan, S. Samukawa, Tohoku University, Japan |
| 11:20am | TF+EM+MI-WeM11 Influence of Iintrinsic and Extrinsic Dopants in HfOx Films for Resistive Switching Memory SungYeon Ryu, Y. Kim, Seoul National University of Science and Technology, Republic of Korea, W.Y. Park, S.G. Kim, SK Hynix Inc., Republic of Korea, B.J. Choi, Seoul National University of Science and Technology, Republic of Korea |
| 11:40am | TF+EM+MI-WeM12 Scaling up of an Electrochemical Atomic Layer Deposition of Copper D. Dictus, Lam Research Corporation, Belgium, Aniruddha Joi, Lam Research Corporation, G. Alessio Verni, Lam Research Corporation, Belgium, K. Vandersmissen, Imec, Belgium, B. Frees, Lam Research Corporation, Belgium, Y. Yezdi, Lam Research Corporation |
| 12:00pm | TF+EM+MI-WeM13 A Novel High-deposition-rate PECVD Process based on Hollow Cathode Plasma Technique S. Shayestehaminzadeh, N. Rivolta, AGC Glass Europe, Belgium, M. Datz, Interpane E&B GmbH, John Chambers, AGC North America, H. Wiame, AGC Glass Europe, Belgium |