| AVS 65th International Symposium & Exhibition | |
| Surface Science Division | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | SS+EM+NS-ThM1 Invited Paper Holes, Pinning Sites and Metallic Wires in Monolayers of 2D Materials Thomas Michely, University of Cologne, Germany |
| 8:40am | SS+EM+NS-ThM3 CO Chemisorption at Pristine, Doped and Defect Sites on Graphene/Ni(111) Mario Rocca, G. Carraro, University of Genova, Italy, M. Smerieri, L. Savio, IMEM-CNR, UOS Genova, Italy, E. Celasco, L. Vattuone, University of Genova, Italy |
| 9:00am | SS+EM+NS-ThM4 Geometry of Cu Islands Buried Beneath the Surface of Graphite A. Lii-Rosales, Ames Laboratory and Iowa State University, S. Julien, Northeastern University, Y. Han, J.W. Evans, Ames Laboratory and Iowa State University, K.-T. Wan, Northeastern University, Patricia A. Thiel, Ames Laboratory and Iowa State University |
| 9:20am | SS+EM+NS-ThM5 Intercalation of O2 and CO between Graphene and Ru(0001) and the Role of Defects Jory Yarmoff, T. Li, University of California, Riverside |
| 9:40am | SS+EM+NS-ThM6 Organic-2D Transition Metal Dichalcogenide van der Waals Heterostructures Yu Li Huang, Institute of Materials Research & Engineering (IMRE), A*STAR, Singapore, Z. Song, National University of Singapore, D. Chi, Institute of Materials Research & Engineering (IMRE), A*STAR, Singapore, A.T.S. Wee, National University of Singapore |
| 11:00am | SS+EM+NS-ThM10 Influence of Surface Functionalization on Surface Topography and Growth of Metal Oxide Structures on HOPG Kathryn Perrine, M. Trought, I. Wentworth, C. de Alwis, T.R. Leftwich, Michigan Technological University |
| 11:20am | SS+EM+NS-ThM11 Impurity Induced Chemical Properties of BN on Rh(111) Studied by First Principle Calculations: A New Phase Zahra Hooshmand, D. Le, T.S. Rahman, University of Central Florida |
| 11:40am | SS+EM+NS-ThM12 Texture of Atomic-layer Deposited MoS: A polarized Raman Study Vincent Vandalon, A. Sharma, W.M.M. Kessels, Eindhoven University of Technology, The Netherlands, A.A. Bol, Eindhoven University of Technology, Netherlands |