| AVS 65th International Symposium & Exhibition | |
| Surface Science Division | Thursday Sessions |
| Session SS+EM+NS-ThM |
| Session: | Defects in and Functionalization of 2D Materials |
| Presenter: | Yu Li Huang, Institute of Materials Research & Engineering (IMRE), A*STAR, Singapore |
| Authors: | Y.L. Huang, Institute of Materials Research & Engineering (IMRE), A*STAR, Singapore Z. Song, National University of Singapore D. Chi, Institute of Materials Research & Engineering (IMRE), A*STAR, Singapore A.T.S. Wee, National University of Singapore |
| Correspondent: | Click to Email |
The recent emergence of two-dimensional transition metal dichalcogenides (2D TMDs) has led to a rapid burgeoning of the field due to their novel electronic and optical properties with potential electronics/photonics applications. Organic materials, on the other hand, have exhibited great success in the field of flexible electronics, with an extensive number of available molecules with tunable properties. Marrying the fields of organics and 2D TMDs will bring benefits that are not present in either material alone, enabling even better, multifunctional flexible devices. In parallel, the integration of 2D TMDs with selected organics is also a promising and controllable approach to modulate the properties of the TMDs without structural damage, thereby optimizing or even enhancing their desired properties for specific device applications. Central to the realization of all those applications is a fundamental understanding of the organic-2D TMD interface.1
Here, we will present our recent studies on hybrid organic/2D TMD heterostructures.2-4 With combined experiments and theoretical modeling, the interfacial interactions between the organic layers and the TMDs as well as the energy level alignment at the interface are explored. The comprehensive understanding of the underlying physical mechanisms that govern the properties of organic-2D TMD interfaces at the atomic scale is of fundamental importance for developing this technique further for device applications.
References:
1. Y. L. Huang, Y. J. Zheng, Z. Song, D. Chi, A. T. S .Wee, S. Y. Quek, Chem. Soc. Rev., 2018, DOI: 10.1039/C8CS00159F (online).
2. Z. Song, Q. Wang, M.-Y. Li, L.-J. Li, Y. J. Zheng, Z. Wang, T. Lin, D. Chi, Z. Ding, Y. L. Huang,A. T. S. Wee, Phys. Rev. B, 97, 134102, 2018.
3. Z. Song, T. Schultz, Z. Ding, B. Lei, C. Han, P. Amsalem, T. Lin, D. Chi, S. L. Wong, Y. J. Zheng, M. Y. Li, L. J. Li, W. Chen, N. Koch, Y. L. Huang and A. T. S. Wee, ACS Nano, 2017, 11, 9128-9135.
4. Y. J. Zheng, Y. L. Huang, Y. Chenp, W. Zhao, G. Eda, C. D. Spataru, W. Zhang, Y.-H. Chang, L.-J. Li, D. Chi, S. Y. Quek and A. T. S. Wee, ACS Nano, 2016, 10, 2476-2484.