AVS 65th International Symposium & Exhibition
    Nanometer-scale Science and Technology Division Friday Sessions

Session NS+AM+AS+MN+PC+PS+SS+TR-FrM
SPM – Probing Chemical Reactions at the Nanoscale

Friday, October 26, 2018, 8:20 am, Room 102B
Moderators: Phillip First, Georgia Institute of Technology, An-Ping Li, Oak Ridge National Laboratory


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:20am NS+AM+AS+MN+PC+PS+SS+TR-FrM1 Invited Paper
Using Self-Assembly to Engineer Electronic Properties in 1D and 2D Molecular Nanostructures
Michael F. Crommie, University of California at Berkeley Physics Dept.
9:00am NS+AM+AS+MN+PC+PS+SS+TR-FrM3
Chemical and Electronic Structure of Aniline Films on Silica Surfaces
Christopher Goodwin, University of Delaware, A.J. Maynes, Virginia Polytechnic Institute and State University, Z.E. Voras, University of Delaware, S.A. Tenney, Center for Functional Nanomaterials Brookhaven National Laboratory, T.P. Beebe, University of Delaware
9:20am NS+AM+AS+MN+PC+PS+SS+TR-FrM4
Electric Field Driven Chemical Reaction of Individual Molecular Subunits by Scanning Tunneling Microscopy
Tomasz Michnowicz, Max Planck Institute for Solid State Research, Germany, Deutschland, B. Borca, Max Planck Institute for Solid State Research, Germany, R. Pétuya, Donostia International Physics Centre, Spain, M. Pristl, R. Gutzler, V. Schendel, I. Pentegov, U. Kraft, H. Klauk, Max Planck Institute for Solid State Research, Germany, P. Wahl, University of St Andrews, UK, A. Arnau, Donostia International Physics Centre, Spain, U. Schlickum, K. Kern, Max Planck Institute for Solid State Research, Germany
9:40am NS+AM+AS+MN+PC+PS+SS+TR-FrM5
Characterising Conjugated Polymers for Organic Electronics by High-resolution Scanning Probe Microscopy
Giovanni Costantini, University of Warwick, UK
10:00am NS+AM+AS+MN+PC+PS+SS+TR-FrM6
Probing Electrical Degradation of Lithium Ion Battery Electrodes with Nanoscale Resolution
Seong Heon Kim, Samsung Advanced Institute of Technology, Republic of Korea, S.Y. Park, H. Jung, Samsung Advanced Institue of Technology, Republic of Korea