AVS 65th International Symposium & Exhibition
    Thin Films Division Thursday Sessions
       Session TF-ThP

Paper TF-ThP40
Atomic Layered Deposition and Characterizations of HfO2 for OLED Encapsulation

Thursday, October 25, 2018, 6:00 pm, Room Hall B

Session: Thin Film Poster Session
Presenter: Nak-Kwan Chung, Korea Research Institute of Standards and Science (KRISS), Republic of Korea
Authors: N.-K. Chung, Korea Research Institute of Standards and Science (KRISS), Republic of Korea
S. Kim, Korea Research Institute of Standards and Science (KRISS)
J.Y. Yun, Korea Research Institute of Standards and Science (KRISS)
J.T. Kim, Korea Research Institute of Standards and Science (KRISS)
Correspondent: Click to Email
Flexible OLED devices require encapsulation layers with low water vapor transmission rate and low temperature process. In this presentation, We report low-temperature preparation of hafnium oxides (HfO2) by atomic layer deposition (ALD). The hafnium oxide thin films were deposited from tetrakis ethylmethylamino hafnium (TEMAHf) as the Hf precursor, ozone (O3) as the reactant, and NH3 as the catalyst on 200 mm silicon wafers at substrate temperatures from 50 to 300°C. The properties of HfO2 films were investigated by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and X-ray deflection (XRD). It was found that HfO2 films grown at low temperature of 50°C using the combination of O3 and NH3 were very smooth and amorphous, and have low impurity contents.