AVS 65th International Symposium & Exhibition
    Thin Films Division Thursday Sessions
       Session TF-ThP

Paper TF-ThP32
Nitridation of Transition Metal Oxide Films

Thursday, October 25, 2018, 6:00 pm, Room Hall B

Session: Thin Film Poster Session
Presenter: Li Chang, National Chiao Tung University, Hsinchu, Taiwan, Taiwan, Republic of China
Authors: L. Chang, National Chiao Tung University, Hsinchu, Taiwan, Taiwan, Republic of China
W.-L. Chen, National Chiao Tung University, Hsinchu, Taiwan, Taiwan, Republic of China
K.A. Chiu, National Chiao Tung University, Hsinchu, Taiwan, Taiwan, Republic of China
Y.S. Fang, National Chiao Tung University, Hsinchu, Taiwan, Taiwan, Republic of China
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Transition metal nitrides are of important industrial applications due to their good electrical conducting properties with high hardness. For formation of the nitride films, plasma nitridation of TiO2, HfO2 and ZrO2 films on Si (100) substrates has been studied with microstructural characterization of x-ray diffraction, electron microscopy,and x-ray photoelectron spectroscopy. Nitriding was performed by using microwave plasma with gas mixture of nitrogen and hydrogen. It is found that microwave plasma is efficient to transform oxide into nitride from the surfaces of the oxide films. With extended nitriding time, a nitride film can be obtained on Si. Furthermore, an epitaxial nitride film can be obtained from an oxide film which was in epitaxy with Si.