Paper TF-ThP30
Comparison of Hafnium Oxide and Zirconium Oxide for Fabricating Electronic Devices

Thursday, October 25, 2018, 6:00 pm, Room Hall B

Thin films of hafnium dioxide (HfO₂) and zirconium oxide (ZrO₂) are used widely as the gate oxide in fabricating integrated circuits (ICs) because of their high dielectric constants. In this research, we report the growth of hafnium dioxide (HfO₂) and zirconium oxide (ZrO₂) thin film using atomic layer deposition (ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using the HfO₂ and ZrO₂ thin films as the gate oxide. MOSFETs, CMOS inverters, and CMOS ring oscillator were fabricated, and the electrical properties of the fabricated devices were measured. The measurement results on the devices fabricated with the two films were compared, and will be reported in the Conference.