| AVS 65th International Symposium & Exhibition | |
| Thin Films Division | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Film Poster Session |
| Presenter: | Panpan Xue, University of Wisconsin-Madison |
| Authors: | P. Xue, University of Wisconsin-Madison Z. Wang, Stanford University T. Chang, University of Wisconsin-Madison Y. Nishi, Stanford University Z. Ma, University of Wisconsin-Madison J.L. Shohet, University of Wisconsin-Madison |
| Correspondent: | Click to Email |
The effect of proton radiation on HfO2-based resistive-random-access-memory (RRAM) is investigated using 10 and 300-keV protons with fluences of 1013 and 1015 cm-2. The I-V characteristics, set and reset voltage, forming process and HRS resistance were measured before and after irradiation. Each RRAM cell has a Pt/HfO2/TiN metal-insulator-metal structure and a 5-nm HfO2 deposited with ALD. All RRAM devices operated functionally after proton irradiation. However, a number (about 30%) of the 10-keV proton-exposed RRAM cells were formed and set to LRS after exposure. In addition, the HRS resistance exhibited a significant decrease after irradiation resulting from displacement damage. After a period of time at room temperature, the radiation-induced damage to the HfO2 film recovered and the HRS resistance increased compared to the initially exposed samples. The displacement damage produces oxygen vacancies and interstitial oxygen atoms that contribute to the generation of the conductive filaments. The oxygen vacancies generated during proton irradiation at the interface can affect the forming process.