AVS 65th International Symposium & Exhibition
    Thin Films Division Thursday Sessions
       Session TF-ThP

Paper TF-ThP25
Thermoelectric Properties of Sb2Te3 Thin Films

Thursday, October 25, 2018, 6:00 pm, Room Hall B

Session: Thin Film Poster Session
Presenter: Eshirdanya McGhee, Alabama A&M University
Authors: E. McGhee, Alabama A&M University
B. Bohara, Alabama A&M University
C. Payton, Alabama A&M University
S. Gere, Alabama A&M University
S. Budak, Alabama A&M University
Correspondent: Click to Email

The efficiency of the thermoelectric materials (figure of merit, ZT) that found to be limited in bulk structures has shown an enhancement by introducing nanostructures such as nanowires, multilayers, and nanocomposites. ZT relies on the Seebeck coefficient (S), the electrical conductivity (σ) and thermal conductivity (K). Nanostructure thin films have shown enhancement in ZT then bulk thermoelectric materials. DC/RF magnetron sputtering technique was utilized to fabricate nano-scale thin films of antimony telluride (Sb2Te3) on SiO2 substrates using Sb2Te3 target. Thermal annealing was carried out to enhance thermoelectric efficiency by forming quantum structures within the films. The Seebeck coefficient, van der Pauw four-probe resistivity, mobility, Hall coefficient, density, measurements were performed, and power factor has been found to be improved in nano-scale thin films by thermal annealing. Thermal treatment showed positive effects on the thermoelectric properties of Sb2Te3 thin films on the selected temperatures. The findings will be shown during the meeting.

Acknowledgement

Research was sponsored by NSF with grant numbers NSF-HBCU-RISE-1546965, NSF-MRI-1337616, DOD with grant numbers W911 NF-08-1-0425, and W911NF-12-1-0063, U.S. Department of Energy National Nuclear Security Administration (DOE-NNSA) with grant numbers DE-NA0001896 and DE-NA0002687.