| AVS 65th International Symposium & Exhibition | |
| Thin Films Division | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Film Poster Session |
| Presenter: | Chao-Te Lee, Instrument Technology Research Center, Taiwan, Republic of China |
| Authors: | C.-T. Lee, Instrument Technology Research Center, Taiwan, Republic of China W.-C. Chen, Instrument Technology Research Center, Taiwan, Republic of China H.-P. Chen, Instrument Technology Research Center, Taiwan, Republic of China M.-K. Wang, Instrument Technology Research Center, Taiwan, Republic of China |
| Correspondent: | Click to Email |
The extreme ultraviolet lithography (EUVL) is based on all-reflective optics operating at wavelength of 13.5 nm, was been proposed the new lithographic systems for the semiconductor industry. Beyond extreme ultraviolet lithography (BEUL), the center wavelength of 6.7 nm, is also being considered as the next generation of EUVL. In this study, the absorber layer (Mo) and space layer (B4C) materials with various complex refractive index were been used to design the periodic films application in BEUVL at 6.7 nm wavelength by RF magnetron sputtering system. The effects of working pressure, RF power, and substrate bias on the microstructure, roughness and optical properties of films were investigated by field emission scanning electron microscopy, X-ray diffraction, atomic force microscopy, high resolution transmission electron microscope, and EUV spectrometer. The possibility of absorber layer/space layer periodic films application for BEUVL optical device with high reflectance was also investigated.