| AVS 65th International Symposium & Exhibition | |
| Thin Films Division | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Film Poster Session |
| Presenter: | Jeong-Hun Choi, Korea Maritime and Ocean University, Republic of Korea |
| Authors: | J.H. Choi, Korea Maritime and Ocean University, Republic of Korea S.W. Lee, Korea Maritime and Ocean University, Republic of Korea C.M. Hyun, Korea Maritime and Ocean University, Republic of Korea J.-H. Ahn, Korea Maritime and Ocean University, Republic of Korea |
| Correspondent: | Click to Email |
In recent years, transition metal oxides and dichalcogenides have received much attention due to its attractive properties for a wide range of applications. Among these materials molybdenum compounds were studied most initiatively and achieved considerable progress. Meanwhile, metallic molybdenum is also widely used as conducting materials in many electronic applications. In this study, therefore, optical, structural and electronic properties of metallic molybdenum and its compounds thin films have been investigated. Plasma-enhanced atomic layer deposition (PEALD) was employed to form the uniform Mo, MoO3, MoS2 thin films. Especially, When Mo(CO)6 was used as the precursor, different kinds of plasma gases such as O2, H2, H2S and their mixtures for reactant resulted in selective growth of Mo, MoO3, MoS2, respectively. Basically, the ALD characteristics with each reactant were studied. The ellipsometry, raman spectroscopy, photo luminescence, X-ray photoelectron spectroscopy, scanning electron microscopy were used to examine film characteristics according to the different precursor combinations and growth conditions. Furthermore, the potential of metallic Mo as well as Mo compounds for device component was investigated.