AVS 65th International Symposium & Exhibition
    Thin Films Division Thursday Sessions
       Session TF-ThP

Paper TF-ThP11
Radiation Effects on Al2O3 Thin Films

Thursday, October 25, 2018, 6:00 pm, Room Hall B

Session: Thin Film Poster Session
Presenter: Zhong-Shan Zheng, Institute of Microelectronics of Chinese Academy of Sciences, China
Authors: H.P. Zhu, Institute of Microelectronics of Chinese Academy of Sciences, China
X. Chen, Institute of Microelectronics of Chinese Academy of Sciences, China
Z.S. Zheng, Institute of Microelectronics of Chinese Academy of Sciences, China
D.L. Li, Institute of Microelectronics of Chinese Academy of Sciences, China
J.T. Gao, Institute of Microelectronics of Chinese Academy of Sciences, China
B. Li, Institute of Microelectronics of Chinese Academy of Sciences, China
J.J. Luo, Institute of Microelectronics of Chinese Academy of Sciences, China
Correspondent: Click to Email
The radiation response of Al2O3 thin films is investigated using Co-60 gamma rays and energetic Si ions. The Al2O3 thin film was prepared on Si substrates with ALD processes, and Al/ Al2O3/ Si structures were used to observe radiation effects on the Al2O3 dielectric film by the capacitance–voltage (C-V) technology. The results show that there are a lot of hole traps in the ALD Al2O3 film, which can be mainly attributed to oxygen vacancy (VO) defects by calculation analyses based on the first-principles, and total dose effects are also apparent for the Al2O3 film irradiated using energetic Si ions at higher fluence levels. In particular, the combined impact of gamma rays and energetic Si ions on the Al2O3 film is examined at the same time, and the results suggest that electron traps can be introduced in the Al2O3 film due to Si ion irradiations.