AVS 65th International Symposium & Exhibition | |
Thin Films Division | Tuesday Sessions |
Session TF+PS-TuA |
Session: | Atomic Layer Processing: Chemistry & Surface Reactions for Atomic Layer Processing |
Presenter: | Camila de Paula, Stanford University |
Authors: | C. de Paula, Stanford University L. Zeng, Stanford University S.F. Bent, Stanford University |
Correspondent: | Click to Email |
Pt thin films have a wide variety of applications in microelectronics, catalysis, and energy technologies. Since most of these applications require a conformal and pinhole-free thin film, achieving good nucleation is an important requirement. It is believed that a low abundance of dissociated oxygen atoms in the initial stages of the Pt ALD process leads to a nucleation delay and island growth. The nucleation and growth mechanisms have a big impact on the properties of the resulting thin film. If nucleation is inhibited, isolated particles rather than a continuous film may be deposited at low cycle numbers (island-growth), whereas if nucleation is facile, a continuous film may be formed at much lower thicknesses.
While there have been studies focused on the surface reactions that occur during Pt ALD, there is still a lack of understanding of how the substrate surface properties affect nucleation in the initial stages of ALD. There have been reports of methods aimed at enhancing nucleation for specific substrates, such as using a wet piranha etch on silicon substrates. Other studies have used high surface energy adhesion layers, such as W, in order to overcome the nucleation delay.
The goal of this study is to develop a surface pre-treatment technique that enhances Pt ALD nucleation independent of substrate choice, while inducing minimum surface modification of the substrate. In this work, the influence of a sub-monolayer surface coverage of small organometallic molecules on the nucleation and growth of Pt by ALD was studied. It was observed that introducing a short pulse of dimethylaluminum chloride (DMACl) prior to Pt deposition leads to the formation of a continuous film after fewer than 100 cycles on thermally grown silicon oxide vs. over 200 cycles on a non-treated sample. Scanning electron microscopy (SEM), synchrotron based grazing incidence small angle X-ray scattering (GISAXS) and X-ray photoelectron spectroscopy (XPS) were used to analyze the ALD growth mechanism on various treated and untreated substrates. The formation of densely-packed large Pt nanoparticles was observed on the treated surface. GISAXS analysis of the Yoneda-Peak position and pattern showed that the surface treatment leads to nanoparticle coalescence in the very early stages of ALD. Interestingly, a comparison of DMACl to other small organometallic molecules showed that some molecules induced the opposite behavior, instead leading to inhibited Pt ALD. The detailed growth mechanism and possible reaction pathways leading to these results will be discussed.