| AVS 65th International Symposium & Exhibition | |
| Thin Films Division | Tuesday Sessions |
| Session TF+PS-TuA |
| Session: | Atomic Layer Processing: Chemistry & Surface Reactions for Atomic Layer Processing |
| Presenter: | YeongGeun Yook, Chonbuk National University, Republic of Korea |
| Authors: | Y.H. Im, Chonbuk National University, Republic of Korea Y.G. Yook, Chonbuk National University, Republic of Korea H.S. You, Chonbuk National University, Republic of Korea J.H. Park, Chonbuk National University, Republic of Korea D.H. You, KW Tech, Republic of Korea K.S. Choi, Chonbuk National University, Republic of Korea W.S. Chang, National Fusion Research Institute, Republic of Korea |
| Correspondent: | Click to Email |
Recently, atomic layer etching (ALE) processes have attracted much interest for sub-10nm semiconductor fabrication process. Notably, a cyclic plasma-enhanced fluorocarbon ALE process using the conventional plasma etch tools has investigated for its selective etching and atomic-level control. In spite of its superior merits, the detailed studies remain to apply sub-10nm 3D nanoscale feature patterns due to its complexity. To address this issue, we developed a 3D feature profile simulator which was composed of a Zero-D bulk plasma simulator, a multiple-level set moving algorithm based on a hash map, a GPU based ballistic transport algorithm, and a surface reaction model. In this work, we focus on the development of a transient surface reaction model of ALE process to capture the realistic surface reaction. Finally, 3D feature profile simulations coupled with the surface reaction model were verified with experimental data. We believe that this approach enables us to understand unveiled phenomena of ALE process.