AVS 65th International Symposium & Exhibition | |
Thin Films Division | Tuesday Sessions |
Session TF+PS-TuA |
Session: | Atomic Layer Processing: Chemistry & Surface Reactions for Atomic Layer Processing |
Presenter: | David Bergsman, Stanford University |
Authors: | D.S. Bergsman, Stanford University T-L. Liu, Stanford University R.G. Closser, Stanford University S.F. Bent, Stanford University |
Correspondent: | Click to Email |
The deposition of alkanethiols onto copper and copper oxide has been widely studied for use in the passivation of surfaces and as ultrathin blocking layers. The formation of alkanethiol self-assembled monolayers (SAMs) on copper oxide is particularly interesting in that thiols are known to etch and reduce copper oxide surfaces before ultimately forming a SAM. This has sometimes resulted in films much thicker than expected for a monolayer, leading to the hypothesis that this etching process can create multilayers, though the structure of those multilayers and the mechanism behind their formation were not explored. In recent years, the use of SAMs to enable area-selective atomic layer deposition (ALD) for back-end semiconductor processing has created renewed interest in the study of thiol deposition onto copper, particularly through vapor-phase approaches that can be more easily incorporated into industrial semiconductor fabrication processes. However, no studies have reported the formation of Cu-thiolate multilayers through the vapor-phase.
In this work, we examine the vapor deposition of dodecanethiols (DDTs) onto copper and copper oxide surfaces. We show using atomic force microscopy, X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy/electron energy loss spectroscopy that this deposition onto copper oxide surfaces results in the formation of up to 8 nm thick Cu-thiolate multilayer films, rather than SAMs. In contrast, pre-removal of the copper oxide and subsequent DDT exposure creates 2 nm thick SAMs, suggesting that the etching of the copper oxide films by thiol molecules is a key step in the multilayer formation. Synchrotron-based grazing-incidence X-ray diffraction shows these thick films to be highly crystalline, with bilayer thiol structures sandwiched between layers of copper atoms. Crystallites are shown to be oriented both perpendicular and parallel to the surface. We further explore the degradation of these multilayers, demonstrating with scanning electron microscopy and XPS that the films appear to dewet into micron-sized particles after exposure to air. Continued air exposure results in the oxidation of the sulfur and copper in the films on a time scale consistent with DDT monolayers. Finally, the implications of this multilayer formation on area-selective ALD will be discussed.