AVS 65th International Symposium & Exhibition
    Thin Films Division Thursday Sessions
       Session TF+PS-ThM

Paper TF+PS-ThM12
High Temperature Active CeO2 Nanorods Generated via Diffusion Limited Atomic Layer Deposition

Thursday, October 25, 2018, 11:40 am, Room 104B

Session: Deposition Processes for 3D and Extreme Geometries
Presenter: Haoming Yan, University of Alabama
Authors: H.M. Yan, University of Alabama
X.Z. Yu, University of Alabama
Q. Peng, University of Alabama
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CeO2 has attracted lots of attention due to its superior oxygen storage and donating ability as a catalyst support. CeO2 nanorods has the best donating ability than all the other types of CeO2 materials. However, the nanorods change its morphology and lose its activity at 400°C or above. Therefore, improving the thermal stability of CeO2 nanorods can unlock the potential applications of CeO2 nanorods in the high temperature applications. In this work, we introduce a diffusion-limited Al2O3 atomic layer deposition to selectively passivate the surface site of CeO2 nanorods, largely enhancing its thermal stability and its oxygen storage capacity simultaneously.