| AVS 65th International Symposium & Exhibition | |
| Thin Films Division | Tuesday Sessions |
| Session TF+AM+EM+PS-TuM |
| Session: | Atomic Layer Processing: Area Selective Deposition |
| Presenter: | Adrie Mackus, Eindhoven University of Technology, The Netherlands, Nederland |
| Correspondent: | Click to Email |
While selectivity has always been one of the most important features of an etching process, only in recent years there has been significant interest in selectivity for deposition, motivated by the application of area-selective deposition in self-aligned fabrication. With selective etching being a more mature technology, previous work in etching can serve as inspiration for how to make deposition processes selective. For example, inhibition layers have been employed in etching to obtain selectivity. Similarly, the use of small molecule inhibitors is currently being explored for achieving area-selective atomic layer deposition (ALD).1
Moreover, with the recent advancements in atomic layer etching (ALE), new opportunities emerge for selective processing of material based on novel combinations of ALD and ALE. In recent work, ALE cycles have been implemented in area-selective ALD processes to improve the selectivity.2
In this presentation, the similarities between etching and area-selective ALD will be described, in order to discuss what the area-selective ALD community can learn from previous work in etching. Recent developments in area-selective ALD will be illustrated by discussing new area-selective ALD approaches based on the use of inhibitors in ABC-type (i.e. three-step) ALD cycles, and on supercycles combining ALD and ALE cycles.
1. A. Mameli, M.J.M. Merkx, B. Karasulu, F. Roozeboom, W.M.M. Kessels, and A.J.M. Mackus, ACS Nano 11, 9303 (2017)
2. R. Vallat, R. Gassiloud, B. Eychenne, and C. Vallée, J. Vac. Sci. Technol. A.35, O1B104 (2017)