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Invited Talk-Future Star of AVS Session: Atom Probe Tomography for 3D Semiconductor Devices Applications

Wednesday, October 24, 2018, 9:40 am, Room 104B

Device structures are rapidly scaling down to the nanometer regime with the ongoing development in semiconductor device technology. Along with this, it is ever critical need to engineer dopant profiles and to define the formation of junctions in Metal-oxide field effect transistors (MOSFETs). This is increasingly challenging considering the severity of short channel effects (SCEs). Indeed, one type of SCE in MOSFET devices known to cause performance degradation is Drain Induced Barrier Lowering (DIBL). To reduce DIBL, dopant junction profiles are made more abrupt. This can be done through the introduction of Sigma/cavity, fully depleted silicon-on-insulator (FDSOI) structures and the modulation of stress through optimal engineered epitaxial buffer layers. To assess the quality over nanometer scale regions requires the use of analysis techniques such as Atom Probe Tomography (APT) and Transmission Electron Microscopy (TEM). This presentation will discuss the role of APT and how elemental distributions vary depending on process conditions along with the challenges involved in sample preparation.