Paper PS+AS+EL+EM+SE-WeM5
Invited Talk-Future Stars of AVS Session: Engineering the Properties at Heusler Interfaces

Wednesday, October 24, 2018, 9:20 am, Room 104B

The Heusler compounds are a ripe platform for engineering and discovering emergent electronic, magnetic, topological, and ferroic properties at crystalline interfaces, either with other functional Heuslers or with compound semiconductor or oxide substrates. In these applications, the ability to control interfaces with near atomic level control is of tantamount importance; however, challenges such as interdiffusion have hampered their development. Here, I will discuss our efforts to control the properties of Heusler interfaces using precision growth by molecular beam epitaxy (MBE). Results will be presented in three areas: (1) the use of epitaxial strain to stabilize the hexagonal phase of several polar metal candidates, (2) the use of monolayer graphene diffusion barriers to enable high temperature growth and performance of spintronic devices, and (3) the phase segregation of ferromagnetic FeV nanostructures from a semiconducting FeVSb matrix with coherent epitaxial interfaces. Together, these examples illustrate the power of epitaxy and interfaces in controlling the properties of Heuslers and other intermetallic compounds, and integrating them onto commonly used semiconductor substrate platforms.