| AVS 65th International Symposium & Exhibition | |
| MEMS and NEMS Group | Thursday Sessions |
| Session MN-ThP |
| Session: | MEMS and NEMS Group Poster Session |
| Presenter: | Meng-Kun Wang, ITRC,NARL, Taiwan, Republic of China |
| Authors: | M.-K. Wang, ITRC,NARL, Taiwan, Republic of China Y.-H. Lin, ITRC,NARL, Taiwan, Republic of China C.-N. Hsiao, ITRC,NARL, Taiwan, Republic of China C.C. Chen, ITRC,NARL, Taiwan, Republic of China J.S. Su, ITRC,NARL, Taiwan, Republic of China N.C. Chu, ITRC,NARL, Taiwan, Republic of China C.-T. Lee, ITRC,NARL, Taiwan, Republic of China |
| Correspondent: | Click to Email |
In this paper, we study the self- limited reaction of Ar/BCl3 and AlGaN. We performed AlGaN surface oxidation reaction with oxygen ions before Ar/BCl3 etching on the AlGaN surface, and used the same power of inductively coupled plasma (ICP), the same working pressure, and the same The etching time was compared to the difference in etching rate of AlGaN between Ar/BCl3 and BCl3. And using Atomic force microscopy (AFM) and scanning electron microscopy (SEM) to observe the change and morphology of the surface roughness after etching. The results show that the mixed gas of Ar/BCl3 has a faster etching rate, the etching rate is about 4.79 nm/min, and the etching rate of BCl3 gas is slow, and the etching rate is about 0.90 nm/min.