| AVS 65th International Symposium & Exhibition | |
| Applied Surface Science Division | Thursday Sessions |
| Session AS-ThP |
| Session: | Applied Surface Science Division Poster Session |
| Presenter: | Mohamed Hedhili, King Abdullah University of Science and Technology (KAUST), Core Labs, Saudi Arabia |
| Authors: | M. Hedhili, King Abdullah University of Science and Technology (KAUST), Core Labs, Saudi Arabia M. Tangi, Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Saudi Arabia P. Mishra, Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Saudi Arabia T.K. Ng, Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Saudi Arabia B. Janjua, Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Saudi Arabia C.C. Tseng, Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Saudi Arabia D.H. Anjum, King Abdullah University of Science and Technology (KAUST), Core Labs, Saudi Arabia M.S. Alias, Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Saudi Arabia N. Wei, King Abdullah University of Science and Technology (KAUST), Core Labs, Saudi Arabia L.J. Li, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Saudi Arabia B.S. Ooi, Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Saudi Arabia |
| Correspondent: | Click to Email |
Heterojunctions are generally formed at the interface of different energy-gap semiconductor materials due to their mismatching electron energies in the valence bands. The values of valence-band mismatches or offsets hold a great significance for the optoelectronics applications and hence their accurate determination is of paramount importance. High-resolution X-ray photoemission spectroscopy (HR-XPS) is proven to be a powerful way of measuring the valence band offsets in such semiconductor heterojunctions. In this report, we extend HR-XPS studies for such measurements to 2D/3D types of heterojunctions. These 2D/3D junctions are synthesized by combining 3D semiconductors (e.g. GaN or InAlN) with 2D semiconductors (e.g. WSe2 or MoS2). By performing an elaborate XPS analysis, we are able to show the type of heterojunctions formed by these semiconductor materials. For instance, we observed that the heterojunction of GaN with either MoS2 or WSe2 is of “Type-II”. Whereas, the junction of InAlN with MoS2 is “type-I”. The presented HR-XPS results are both supported and corroborated by performing the analaysis of these samples with other techniques including atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence . The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.